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FMS7G10US60 Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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FMS7G10US60 Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 10 page 3 www.fairchildsemi.com FMS7G10US60 Rev. B1 Electrical Characteristics of IGBT @ Inverter T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 µA IGES Gate - Emitter Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) Gate - Emitter Threshold Voltage IC = 10mA, VCE = VGE 5.0 6.5 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC = 10A, VGE = 15V -- 2.1 2.7 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 710 -- pF Coes Output Capacitance -- 57 -- pF Cres Reverse Transfer Capacitance -- 12 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 25°C -- 65 130 ns tr Rise Time -- 65 130 ns td(off) Turn-Off Delay Time -- 80 160 ns tf Fall Time -- 100 200 ns Eon Turn-On Switching Loss -- 0.15 -- mJ Eoff Turn-Off Switching Loss -- 0.2 -- mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 10A, RG = 20Ω, VGE = 15V, Inductive Load, TC = 125°C -- 70 140 ns tr Rise Time -- 60 120 ns td(off) Turn-Off Delay Time -- 90 180 ns tf Fall Time -- 200 350 ns Eon Turn-On Switching Loss -- 0.16 -- mJ Eoff Turn-Off Switching Loss -- 0.3 -- mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- µs Qg Total Gate Charge VCE = 300 V, IC = 10A, VGE = 15V -- 35 50 nC Qge Gate-Emitter Charge -- 8 15 nC Qgc Gate-Collector Charge -- 12 20 nC |
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