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K4H560838E-GCB3 Datasheet(PDF) 10 Page - Samsung semiconductor |
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K4H560838E-GCB3 Datasheet(HTML) 10 Page - Samsung semiconductor |
10 / 24 page DDR SDRAM DDR SDRAM 256Mb E-die (x4, x8) Rev. 1.3 April, 2005 DDR SDRAM Spec Items & Test Conditions Conditions Symbol Operating current - One bank Active-Precharge; tRC=tRCmin; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; DQ,DM and DQS inputs changing once per clock cycle; address and control inputs changing once every two clock cycles. IDD0 Operating current - One bank operation ; One bank open, BL=4, Reads - Refer to the following page for detailed test condition IDD1 Percharge power-down standby current; All banks idle; power - down mode; CKE = <VIL(max); tCK=10ns for DDR200,7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM. IDD2P Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Address and other control inputs changing once per clock cycle; Vin = Vref for DQ,DQS and DM IDD2F Precharge Quiet standby current; CS# > = VIH(min); All banks idle; CKE > = VIH(min); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Address and other control inputs stable at >= VIH(min) or =<VIL(max); Vin = Vref for DQ ,DQS and DM IDD2Q Active power - down standby current ; one bank active; power-down mode; CKE=< VIL (max); tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; Vin = Vref for DQ,DQS and DM IDD3P Active standby current; CS# >= VIH(min); CKE>=VIH(min); one bank active; active - precharge; tRC=tRASmax; tCK=10ns for DDR200, 7.5ns for DDR266, 6ns for DDR333; DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle IDD3N Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control inputs changing once per clock cycle; CL=2 at tCK=10ns for DDR200, CL=2 at 7.5ns for DDR266(A2), CL=2.5 at 7.5ns for DDR266(B0), 6ns for DDR333; 50% of data changing on every transfer; lout = 0 m A IDD4R Operating current - burst write; Burst length = 2; writes; continuous burst; One bank active address and control inputs changing once per clock cycle; CL=2 at tCK= 10ns for DDR200, CL=2 at tCK=7.5ns for DDR266(A2), CL=2.5 at tCK=7.5ns for DDR266(B0), 6ns for DDR333; DQ, DM and DQS inputs changing twice per clock cycle, 50% of input data changing at every burst IDD4W Auto refresh current; tRC = tRFC(min) - 8*tCK for DDR200 at tCK=10ns; 10*tCK for DDR266 at tCK=7.5ns; 12*tCK for DDR333 at tCK=6ns; distributed refresh IDD5 Self refresh current; CKE =< 0.2V; External clock on; tCK = 10ns for DDR200, tCK=7.5ns for DDR266, 6ns for DDR333. IDD6 Orerating current - Four bank operation ; Four bank interleaving with BL=4 -Refer to the following page for detailed test condition IDD7A Input/Output Capacitance (VDD=2.5, VDDQ=2.5V, TA= 25°C, f=100MHz) Parameter Symbol Min Max Delta Unit Note Input capacitance (A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE) CIN1 1.5 2.5 0.5 pF 4 Input capacitance( CK, CK ) CIN2 1.5 2.5 0.25 pF 4 Data & DQS input/output capacitance COUT 3.5 4.5 0.5 pF 1,2,3,4 Input capacitance (DM) CIN3 3.5 4.5 pF 1,2,3,4 1.These values are guaranteed by design and are tested on a sample basis only. 2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is required to match signal propagation times of DQ, DQS, and DM in the system. 3. Unused pins are tied to ground. 4. This parameteer is sampled. VDDQ = +2.5V +0.2V, VDD = +3.3V +0.3V or +0.25V+0.2V, f=100MHz, tA=25 °C, Vout(dc) = VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading (to facilitate trace matching at the board level). Note : |
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