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MG200Q2YS65H Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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MG200Q2YS65H Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 6 page  MG200Q2YS65H 2002-10-04 3 Collector-emitter voltage VCE (V) IC – VCE (sat) Collector-emitter voltage VCE (V) IC – VCE (sat) Gate-emitter voltage VGE (V) VCE – VGE Gate-emitter voltage VGE (V) VCE – VGE Gate-emitter voltage VGE (V) IC – VGE Forward voltage VF (V) IF – VF 0 0 4 8 12 16 4 8 12 16 20 Common emitter Tc = 25°C IC = 400 A 100 A 200 A 0 0 50 100 150 200 4 8 12 16 Common emitter VCE = 5 V Tc = 125°C -40°C 25°C 0 0 100 200 300 400 1 2 3 4 Tc = 125°C 25°C Common cathode VGE = 0 0 0 100 200 300 400 2 4 6 8 10 VGE = 8 V 10 V 12 V 20 V 18 V 15 V Common emitter Tc = 125°C 0 0 4 8 12 16 4 8 12 16 20 Common emitter Tc = 125°C IC = 400 A 100 A 200 A 12 V 0 0 100 200 300 400 2 4 6 8 10 Common emitter Tc = 25°C VGE = 8 V PC = 1310 W 10 V 20 V 18 V 15 V |
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