2SK3761

2004-02-26

1

10.5max

3.84±0.2

1.5 max

0.81 max

2.54

4.7max

1.3

0.45

2.7

1

2

3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ)

2SK3761

Switching Regulator Applications

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

600

V

600

V

Gate-source voltage

±30

V

DC

(Note 1)

6

Drain current

Pulse (t

= 1 ms)

(Note 1)

24

A

Drain power dissipation (Tc

= 25°C)

74

W

Single pulse avalanche energy

(Note 2)

54

mJ

Avalanche current

6

A

Repetitive avalanche energy (Note 3)

7.4

mJ

Channel temperature

150

°C

Storage temperature range

-55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to case

1.68

°C/W

Thermal resistance, channel to ambient

83.3

°C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 3: Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

unit：ｍｍ

1

3

2

Weight : 2.0g(typ.)

JEDEC

JEITA

TOSHIBA

TO-220AB

SC-46

―

1.

Gate

2.

Drain(HEAT SINK)

3.

Source

1.5 max

2.54

3.84±0.2

10.5 max

4.7 max

1.3

0.45

2.7

0.81