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2SK3761 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3761 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK3761 2004-02-26 1 10.5max 3.84±0.2 1.5 max 0.81 max 2.54 4.7max 1.3 0.45 2.7 1 2 3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSⅥ) 2SK3761 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.9Ω (typ.) • High forward transfer admittance: |Yfs| = 5.0S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Drain-gate voltage (RGS = 20 kΩ) VDGR 600 V Gate-source voltage VGSS ±30 V DC (Note 1) ID 6 Drain current Pulse (t = 1 ms) (Note 1) IDP 24 A Drain power dissipation (Tc = 25°C) PD 74 W Single pulse avalanche energy (Note 2) EAS 54 mJ Avalanche current IAR 6 A Repetitive avalanche energy (Note 3) EAR 7.4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 1.68 °C/W Thermal resistance, channel to ambient Rth (ch-a) 83.3 °C/W Note 1: Please use devices on conditions that the channel temperature is below 150°C. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 2.6 mH, IAR = 6 A, RG = 25 Ω Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. unit:mm 1 3 2 Weight : 2.0g(typ.) JEDEC JEITA TOSHIBA TO-220AB SC-46 ― 1. Gate 2. Drain(HEAT SINK) 3. Source 1.5 max 2.54 3.84±0.2 10.5 max 4.7 max 1.3 0.45 2.7 0.81 |
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