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FSES0765RG Datasheet(PDF) 5 Page - Fairchild Semiconductor |
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FSES0765RG Datasheet(HTML) 5 Page - Fairchild Semiconductor |
5 / 18 page FSES0765RG 5 Electrical Characteristics (Continued) (Ta=25 °C unless otherwise specified) Note: 1. These parameters, although guaranteed in design, are tested only in EDS (wafer test) process. 2. These parameters, although guaranteed in design, are not tested in mass production. Parameter Symbol Condition Min. Typ. Max. Unit SENSEFET SECTION Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250μA 650 - - V Zero Gate Voltage Drain Current IDSS VDS = Max, Rating, VGS = 0V - - 250 μA VDS= 0.8*Max., Rating VGS = 0V, TC = 85°C - - 300 μA Static Drain-source on Resistance RDS(ON) VGS = 10V, ID = 2.3A - 1.4 1.6 Ω Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz - 100 130 pF UVLO SECTION Vcc Start Threshold Voltage VSTART VFB=5V 11 12 13 V Vcc Stop Threshold Voltage (Normal operation) VSTOP VFB=5V 8.5 9 9.5 V Vcc Stop Threshold Voltage (Burst operation) VBSTOP VFB=0V 7 7.5 8 V OSCILLATOR SECTION Initial Frequency FOSC VFB=5 18 20 22 kHz Voltage Stability FSTABLE 11V ≤ Vcc ≤ 18V 0 1 3 % Maximum Duty Cycle DMAX VFB=5 48 55 62 % Minimum Duty Cycle DMIN -- 0 - % FEEDBACK SECTION Feedback Source Current (Normal operation) IFB VFB = 0V, Vcc=15V 0.7 0.9 1.1 mA Feedback Source Current (Burst operation) IBFB VFB = 0V, Vcc=8.7V 70 100 130 uA Feedback Voltage Threshold to Stop Switching VOFF 0V ≤ VFB ≤ 0.4V 0.2 0.3 0.4 V Shutdown Feedback Voltage VSD VFB ≥ 6.9V 7 7.5 8 V Shutdown Delay Current IDELAY VFB = 4V 1.6 2 2.4 μA PROTECTION SECTION Over Voltage Protection VOVP Vcc ≥ 17V18 19 20 V Over Current Protection Threshold Voltage(1) VAOCP - 0.9 1.0 1.1 V Thermal Shutdown Temp(2) TSD - 140 - - °C |
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