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ISL9V2540S3ST Datasheet(PDF) 3 Page - Fairchild Semiconductor |
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ISL9V2540S3ST Datasheet(HTML) 3 Page - Fairchild Semiconductor |
3 / 9 page ©2005 Fairchild Semiconductor Corporation ISL9V2540S3S Rev A. www.fairchildsemi.com Dynamic Characteristics Switching Characteristics Thermal Characteristics QG(ON) Gate Charge IC = 10A, VCE = 12V, VGE = 5V, See Fig. 14 - 15.1 - nC VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA, VCE = VGE, See Fig. 10 TC = 25°C1.3 - 2.2 V TC = 150°C0.75 - 1.8 V VGEP Gate to Emitter Plateau Voltage IC = 10A, VCE = 12V -3.1 - V td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω, VGE = 5V, RG = 1KΩ TJ = 25°C -0.61 - µs triseR Current Rise Time-Resistive - 2.17 - µs td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 500µHy, VGE = 5V, RG = 1KΩ TJ = 25°C, See Fig. 12 -3.64 - µs tfL Current Fall Time-Inductive - 2.36 - µs SCIS Self Clamped Inductive Switching TJ = 25°C, L = 3.0mHy, RG = 1KΩ, VGE = 5V, See Fig. 1 & 2 - - 250 mJ RθJC Thermal Resistance Junction-Case TO-263 - - 0.9 °C/W |
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