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RMPA61810 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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RMPA61810 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2004 Fairchild Semiconductor Corporation March 2004 RMPA61810 Rev. B RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC General Description The Fairchild Semiconductor RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. This single channel amplifier provides typically, 21dB small signal gain and 31dBm output power at 1dB gain compression. Features • 21dB Typical Small Signal Gain • 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR • 31dBm Output Power at 1dB Gain Compression • 32dBm Output Power at 3dB Gain Compression • 22% Typical Power Added Efficiency at 1dB Gain Compression • Chip size: 6.55mm x 2.67mm x 0.1mm Absolute Ratings Electrical Characteristics (Operated at 25°C, 50Ω system, Vd = +8V, quiescent current (Idq = 600 mA) Note: 1. Typical range of the negative gate voltage is -1 to 0V to set a typical Idq of 600 mA. Symbol Parameter Ratings Units Vd Positive Drain DC Voltage 8.5 V Vg Negative DC Voltage -2 V Vdg Simultaneous (Vd–Vg) +10.5 V Pin RF CW Input Power (50 Ω source) 27 dBm Id Drain Current 1.2 A TSTG Storage Temperature -55 to +125 °C Tc Operating Baseplate Temperature -40 to +85 °C RJC Thermal Resistance (Channel to Backside) 12 °C/W Parameter Min Typ Max Units Frequency Range 6.0 18.0 GHz Small Signal Gain 15 21 dB P1dB Compression 28 31 dBm P3dB Compression 30 32 dBm PAE at 1dB Gain Compression 12 22 % Input Return Loss 9.5 dB Output Return Loss 7.4 dB Gate Voltage (Vg)1 -0.4 V Gain vs. Temp. 0 ~ 85°C -0.025 dB/°C Device |
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