©2004 Fairchild Semiconductor Corporation

March 2004

RMPA61810 Rev. B

RMPA61810

Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC

General Description

The Fairchild Semiconductor RMPA61810 is a fully

monolithic power amplifier operating over the 6.0 to 18.0

GHz frequency band. The amplifier uses a 0.25 micron

Pseudomorphic High Electron Mobility Transistor (PHEMT)

process to maximize efficiency and output power. The chip

configuration

incorporates

two

stages

of

reactively

combined amplifiers at the output preceded by an input

amplifier stage. This single channel amplifier provides

typically, 21dB small signal gain and 31dBm output power

at 1dB gain compression.

Features

• 21dB Typical Small Signal Gain

• 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR

• 31dBm Output Power at 1dB Gain Compression

• 32dBm Output Power at 3dB Gain Compression

• 22% Typical Power Added Efficiency at 1dB Gain

Compression

• Chip size: 6.55mm x 2.67mm x 0.1mm

Absolute Ratings

Note:

1. Typical range of the negative gate voltage is -1 to 0V to set a typical Idq of 600 mA.

Symbol

Parameter

Ratings

Units

Vd

Positive Drain DC Voltage

8.5

V

Vg

Negative DC Voltage

-2

V

Vdg

Simultaneous (Vd–Vg)

+10.5

V

Pin

RF CW Input Power (50

Ω source)

27

dBm

Id

Drain Current

1.2

A

Storage Temperature

-55 to +125

°C

Tc

Operating Baseplate Temperature

-40 to +85

°C

Thermal Resistance (Channel to Backside)

12

°C/W

Parameter

Min

Typ

Max

Units

Frequency Range

6.0

18.0

GHz

Small Signal Gain

15

21

dB

P1dB Compression

28

31

dBm

P3dB Compression

30

32

dBm

PAE at 1dB Gain Compression

12

22

%

Input Return Loss

9.5

dB

Output Return Loss

7.4

dB

-0.4

V

Gain vs. Temp. 0 ~ 85°C

-0.025

dB/°C

Device