LG Semicon

GM71C(S)4400C/CL

4

Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)

Symbol

Parameter

Note

Max

Unit

Min

Max

Min

Max

Min

Random Read or Write Cycle Time

110

-

130

-

150

-

ns

RAS Precharge Time

40

-

50

-

60

-

ns

RAS Pulse Width

ns

CAS Pulse Width

10,000

10,000

ns

20

20

Row Address Set-up Time

0

-

-

-

ns

0

0

Row Address Hold Time

10

-

-

-

ns

10

10

Column Address Set-up Time

0

-

-

-

ns

0

0

Column Address Hold Time

15

-

-

-

ns

15

15

RAS to CAS Delay Time

20

45

50

60

ns

20

20

8

RAS to Column Address Delay Time

15

30

35

40

ns

15

15

9

RAS Hold Time

15

-

-

-

ns

20

20

CAS Hold Time

60

-

-

-

ns

70

80

CAS to RAS Precharge Time

10

-

-

-

ns

10

10

Transition Time

(Rise and Fall)

3

50

50

50

ns

3

3

7

Refresh Period

-

16

16

16

ms

-

-

Symbol

Parameter

Note

Input Capacitance (Address)

Input Capacitance (Clocks)

Data Input, Output Capacitance (Data-In, Out)

1

1

1, 2

Unit

§Ü

§Ü

§Ü

Max

5

7

10

Min

-

-

-

Note: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

-

128

128

128

ms

-

-

Refresh Period (L-version)

15

-

-

-

ns

20

20

0

-

-

-

ns

0

0

0

-

-

-

ns

0

0

GM71C(S)4400

C/CL-60

GM71C(S)4400

C/CL-70

GM71C(S)4400

C/CL-80

Test Conditions

Input rise and fall times: 5ns

Input, output timing reference levels: 0.8V, 2.4V

(Including scope and jig)