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Die Characteristics

DIE DIMENSIONS:

2450

µm x 4950µm x 533µm ±25.4µm

(97 x 195 x 21mils

±1mil)

METALLIZATION:

M1: Mo/Tiw

Thickness: 5800

Å

M2: Al/Si/Cu

Thickness: 10k

Å

SUBSTRATE POTENTIAL:

May be left floating.

BACKSIDE FINISH:

Silicon

PASSIVATION:

Thickness: 8k

Å

WORST CASE CURRENT DENSITY:

TRANSISTOR COUNT:

285

PROCESS:

Radiation Hardened CMOS, AVLSI

Metallization Mask Layout

HS-26C31RH

(14) DO

(13) DO

(12) ENABLE

(11) CO

(10) CO

AO (2)

AO (3)

ENABLE (4)

BO (5)

BO (6)

HS-26C31RH-T