ASD355-N datasheet(1/2 Pages) FORMOSA

Part #	ASD355-N

Description	Silicon epitaxial planar type

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Manufacturer	FORMOSA [Formosa MS]

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Advanced Switching Diode

ASD355-N

Silicon epitaxial planar type

Features

Small surface mounting type

High reliability

High speed ( trr < 4 ns )

Mechanical data

Case : Molded plastic, JEDECSOD-323

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by cat hode band

Mounting Position : Any

Weight : 0.000159 ounce, 0.0045 gram

MAXIMUM RATINGS (AT T A=25

oC unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

MIN.

TYP.

MAX.

UNIT

Repetitive peak reverse voltage

VRRM

100

V

Peak forward surge current

tp < 1s

IFSM

500.0

mA

Average forward current

VR = 0

IFAV

100

mA

Power dissipation

PV

350

mW

Junction temperature

Tj

175

o C

Storage temperature

TSTG

-55

+175

o C

Formosa MS

ELECTRICAL CHARACTERISTICS (AT T A=25

oC unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 10mA

VF

1.2

V

VR = 25V

IR

100

nA

VR = 25V , Tj = 150

o C

IR

50

uA

VR = 80V

IR

30

uA

Breakdown current

IR = 100uA , TP /T = 0.01 TP = 0.3ms

V(BR)

100

V

Diode capacitance

VR = 0 , f = 1MHz , VHF = 50mV

CD

4.0

pF

Thermal resistance

Junction to ambient

RthJA

K/mW

Reverse recovery time

IF =10mA, VR =6V, IRR = 0.1 X IR , RL =100OHM

trr

4

ns

Reverse current

SOD-323

0.106 (2.7)

0.090 (2.3)

0.012(0.3) Typ.

0.053 (1.35)

0.045 (1.15)

0.035 (0.9)

0.028 (0.7)

R0.5 (0.02) Typ.

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