HM5118165J-7 datasheet(6/33 Pages) HITACHI

Part #	HM5118165J-7

Description	16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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6 / 33 page

HM5118165 Series

6

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to V

SS

V

T

–1.0 to +7.0

V

Supply voltage relative to V

SS

V

CC

–1.0 to +7.0

V

Short circuit output current

Iout

50

mA

Power dissipation

P

T

1.0

W

Operating temperature

Topr

0 to +70

°C

Storage temperature

Tstg

–55 to +125

°C

Recommended DC Operating Conditions (Ta = 0 to +70

°C)

Parameter

Symbol

Min

Typ

Max

Unit

Notes

Supply voltage

V

CC

4.5

5.0

5.5

V

1, 2

Input high voltage

V

IH

2.4

—

6.5

V

1

Input low voltage

V

IL

–1.0

—

0.8

V

1

Notes: 1. All voltage referred to V

SS

2. The supply voltage with all V

CC pins must be on the same level.

The supply voltage with all V

SS

pins must be on the same level.

DC Characteristics (Ta = 0 to +70

°C, V

CC = 5 V ± 10%, VSS = 0 V)

HM5118165

-5

-6

-7

Parameter

Symbol

Min Max Min Max Min Max Unit

Test conditions

Operating current*

1, *2

I

CC1

—

200 —

170 —

150 mA

t

RC = min

Standby current

I

CC2

—

2

—

2

—

2

mA

TTL interface

RAS, UCAS, LCAS = V

IH

Dout = High-Z

—

1

—

1

—

1

mA

CMOS interface

RAS, UCAS,

LCAS

≥ V

CC – 0.2 V

Dout = High-Z

Standby current

(L-version)

I

CC2

—

150 —

150

µA

CMOS interface

RAS, UCAS,

LCAS

≥ V

CC – 0.2 V

Dout = High-Z

Similar Part No. - HM5118165J-7

Manufacturer	Part #	Datasheet	Description
Elpida Memory	HM5118165J-7	597Kb / 32P	16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh

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Similar Description - HM5118165J-7

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HM5118165J-7 Datasheet(PDF) 6 Page - Hitachi Semiconductor

HM5118165J-7 Datasheet(HTML) 6 Page - Hitachi Semiconductor

Similar Part No. - HM5118165J-7

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