HD1530FX datasheet(3/7 Pages) STMICROELECTRONICS

Part #	HD1530FX

Description	High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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HD1530FX

2 Electrical Characteristics

3/7

2

Electrical Characteristics

Table 3.

Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

Note: 1 Pulsed duration = 300

μs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 1500V

VCE = 1500V____TC = 125°C

0.2

2

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5V

10

μA

VCEO(SUS)

Note: 1

Collector-Emitter

Sustaining Voltage (IB = 0)

IC = 10mA

700

V

VEBO

Emitter-Base Voltage

IE = 10mA

10

V

VCE(sat)

Note: 1

Collector-Emitter saturation

Voltage

IC = 13A _____ IB = 3.25A

2

V

VBE(sat)

Note: 1

Base-Emitter saturation Voltage

IC = 13A _____ IB = 3.25A

1

1.5

V

hFE

DC Current Gain

IC = 1A _____ VCE = 5V

IC = 13A ____ VCE = 5V

5.5

30

9

ts

tf

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 12A ____ _ fh = 32KHz

IB(on) = 1.4A ___ IB(off) = -6A

3.2

230

μs

ns

ts

tf

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 12A _____ fh = 48KHz

IB(on) = 2A ____ IB(off) = -6.7A

2.8

200

μs

ns

ts

tf

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 6.5A _____ fh = 100KHz

IB(on) = 0.8A ___ IB(off) = -4.5A

1.4

100

μs

ns

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