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TPCA8102 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # TPCA8102
Description  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCA8102 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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TPCA8102
2003-08-29
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
(Tc=25℃)
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2a)
Rth (ch-a)
44.6
°C/W
Thermal resistance, channel to ambient
(t
= 10 s)
(Note 2b)
Rth (ch-a)
78.1
°C/W
Marking (Note 5)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V,Tch = 25°C (initial),L = 100μH,RG = 25 Ω,IAR = − 40 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ○ on lower left of the marking indicates Pin 1.
(a)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
Weekly code:
(Three digits)
Week of manufacture
(01 for first week of year, continues up to 52 or 53)
Year of manufacture
(One low-order digits of calendar year)
TPCA
8102
Lot No.
Type


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