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M393T5750CZA-CE7 Datasheet(PDF) 2 Page - Samsung semiconductor

Part # M393T5750CZA-CE7
Description  DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb C-die 72-bit ECC
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

M393T5750CZA-CE7 Datasheet(HTML) 2 Page - Samsung semiconductor

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Rev. 1.2 Aug. 2005
512MB, 1GB, 2GB Registered DIMMs
DDR2 SDRAM
DDR2 Registered DIMM Ordering Information
Note: “Z” of Part number(11th digit) stand for Lead-free products.
Note: “3” of Part number(12th digit) stand for Dummy Pad PCB products.
Note: "A" of Part number(12th digit) stand for Parity Register products.
Part Number
Density
Organization
Component Composition
Number of Rank
Parity Register
Height
M393T6553CZ3-CD5/CC
512MB
64Mx72
64Mx8(K4T51083QC)*9EA
1
X
30mm
M393T6553CZA-CE7/E6/D5/CC
512MB
64Mx72
64Mx8(K4T51083QC)*9EA
1
O
30mm
M393T2953CZ3-CD5/CC
1GB
128Mx72
64Mx8(K4T51083QC)*18EA
2
X
30mm
M393T2953CZA-CE7/E6/D5/CC
1GB
128Mx72
64Mx8(K4T51083QC)*18EA
2
O
30mm
M393T2950CZ3-CD5/CC
1GB
128Mx72
128Mx4(K4T51043QC)*18EA
1
X
30mm
M393T2950CZA-CE7/E6/D5/CC
1GB
128Mx72
128Mx4(K4T51043QC)*18EA
1
O
30mm
M393T5750CZ3-CD5/CC
2GB
256Mx72
128Mx4(K4T51043QC)*36EA
2
X
30mm
M393T5750CZA-CE7/E6/D5/CC
2GB
256Mx72
128Mx4(K4T51043QC)*36EA
2
O
30mm
Features
• Performance range
• JEDEC standard 1.8V ± 0.1V Power Supply
•VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5
• Programmable Additive Latency: 0, 1 , 2 , 3 and 4
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• PASR(Partial Array Self Refresh)
• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
-
support High Temperature Self-Refresh rate enable feature
• Serial presence detect with EEPROM
• DDR2 SDRAM Package: 60ball FBGA - 128Mx4/64Mx8
• All of Lead-free products are compliant for RoHS
Note: For detailed DDR2 SDRAM operation, please refer to Samsung’s Device operation & Timing diagram.
E7(DDR2-800)
E6(DDR2-667)
D5(DDR2-533)
CC(DDR2-400)
Unit
Speed@CL3
400
400
400
400
Mbps
Speed@CL4
533
533
533
400
Mbps
Speed@CL5
800
667
-
-Mbps
CL-tRCD-tRP
5-5-5
5-5-5
4-4-4
3-3-3
CK
Address Configuration
Organization
Row Address
Column Address
Bank Address
Auto Precharge
128Mx4(512Mb) based Module
A0-A13
A0-A9,A11
BA0-BA1
A10
64Mx8(512Mb) based Module
A0-A13
A0-A9
BA0-BA1
A10


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