G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 5 -
AC Characteristics (0
°°C≤≤T
A
≤≤70°°C,See note 1,2)
Test condition:VCC=5.0V
±10%, V
IH/VIL=2.4V/0.8V,VOH/VOL=2.0V/0.8V
Parameter
40 ns
50 ns
60 ns
Symbol
MIN.
MAX.
MIN.
MAX.
MIN.
MAX. Unit
Notes
Read/Write Cycle Time
tRC
75
-
90
-
110
-
ns
Read Midify Write Cycle Time
tRWC
120
-
140
-
160
-
ns
Access Time from RAS
tRAC
-
40
-
50
-
60
ns
3,4
Access Time from CAS
tCAC
-
12
-
13
-
15
ns
3,4
Access Time from Column Address
tAA
-
20
-
25
-
30
ns
3,4
CAS to Output in Low-Z
tCLZ
0
-
0
-
0
-
ns
3
Output Buffer Turn-off Delay from CAS
tOFF
0
8
0
10
0
13
ns
7
Transition Time(Rise and Fall)
tT
3
50
3
50
3
50
ns
2
RAS Precharge Time
tRP
25
-
30
-
40
-
ns
RAS Pulse Width
tRAS
40
10000
50
10000
60
10000
ns
RAS Hold Time
tRSH
12
-
13
-
15
-
ns
CAS Hold Time
tCSH
40
-
50
-
60
-
ns
CAS Pulse Width
tCAS
12
10000
13
10000
15
10000
ns
RAS to CAS Delay Time
tRCD
16
30
18
37
20
45
ns
4
RAS to Column Address Delay Time
tRAD
11
22
13
25
15
30
ns
4
CAS to RAS Precharge Time
tCRP
5
-
5
-
5
-
ns
8
Row Address Setup Time
tASR
0
-
0
-
0
-
ns
Row Address Hold Time
tRAH
6
-
8
-
10
-
ns
Column Address Setup Time
tASC
0
-
0
-
0
-
ns
Column Address Hold Time
tCAH
6
-
8
-
10
-
ns
Column Address Hold Time Referenced
to RAS
tAR
30
-
40
-
45
-
ns
Column Address Lead Time Referenced
to RAS
tRAL
20
-
25
-
30
-
ns
Read Command Setup Time
tRCS
0
-
0
-
0
-
ns
Read Command Hold Time Referenced
to RAS
tRRH
0
-
0
-
0
-
ns
9
Read Command Hold Time Referenced
to CAS
tRCH
0
-
0
-
0
-
ns
9
WE Hold Time Referenced to CAS
tWCH
6
-
7
-
10
-
ns
10
Write Command Hold Time Referenced
to RAS
tWCR
30
-
40
-
45
-
ns
5
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