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HERAF1601G Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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HERAF1601G Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 2 page  - 352 - .071(1.8) MAX .161(4.1) .146(3.7) .118(3.00) .124(3.16) .185(4.7) .173(4.4) .272(6.9) .248(6.3) .063(1.6) MAX .100(2.55) .543(13.8) .512(13.2) .100(2.55) .110(2.8) .098(2.5) .606(15.5) .583(14.8) .112(2.85) .100(2.55) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA 2 PIN 1 PIN 2 Case Positive HERAF1601G THRU HERAF1608G Isolation 16.0 AMPS. Glass Passivated High Efficient Rectifiers Voltage Range 50 to 1000 Volts Current 16.0 Amperes Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Cases: ITO-220AC molded plastic Epoxy: UL 94V-O rate flame retardant Terminals: Leads solderable per MIL- STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds 0.25”,(6.35mm) from case. Mounting torque : 5 in – 1bs. max. Weight: 2.24 grams ITO-220AC Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 ℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HERAF 1601G HERAF 1602G HERAF 1603G HERAF 1604G HERAF 1605G HERAF 1606G HERAF 1607G HERAF 1608G Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current @TC =100 ℃ I(AV) 16.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 250 A Maximum Instantaneous Forward Voltage @16.0A VF 1.0 1.3 1.7 V Maximum DC Reverse Current @TA=25 ℃ at Rated DC Blocking Voltage @ TA=125 ℃ IR 10.0 400 uA uA Maximum Reverse Recovery Time (Note 1) Trr 50 80 nS Typical Junction Capacitance (Note 2) Cj 150 110 pF Typical Thermal Resistance (Note 3) R θJC 2.0 ℃/W Operating Temperature Range TJ -65 to +150 ℃ Storage Temperature Range TSTG -65 to +150 ℃ Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. |
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