G -LINK
GLT44108
512K X 8 CMOS DYNAMIC RAM WITH FAST PAGE MODE
Preliminary Aug 1999 (Rev.2.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No.24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 3 -
Absolute Maximum Ratings*
Capacitance*
TA=25
°C, V
CC=5V
±10%, V
SS=0V
Operating Temperature, TA (ambient)
......................................-10
°C to +80°C
Storage Temperature(plastic)....-55
°C to +150°C
Voltage Relative to VSS...............-1.0V to + 7.0V
Short Circuit Output Current......................50mA
Power Dissipation......................................1.0W
Symbol
CIN1
CIN2
COUT
Parameter
Address Input
RAS , CAS , WE , OE
Data Input/Output
Max.
5
7
7
Unit
pF
pF
pF
*Note:Operation above Absolute Maximum Ratings can
adversely affect device reliability.
Electrical Specifications
*Note: Capacitance is sampled and not 100% tested
l
All voltages are referenced to GND.
l
After power up, wait more than 200
µs and then, execute eight CAS before RAS or RAS only
refresh cycles as dummy cycles to initialize internal circuit.