© Semiconductor Components Industries, LLC, 2000

April, 2000 – Rev. 0

1

Publication Order Number:

MGP15N35CL/D

MGP15N35CL,

MGB15N35CL,

MGC15N35CL

Internally Clamped

N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

monolithic circuitry integrating ESD and Over–Voltage clamped

protection for use in inductive coil drivers applications. Primary uses

include Ignition, Direct Fuel Injection, or wherever high voltage and

high current switching is required.

Stress Applied to Load

Microprocessor Devices

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCES

380

VDC

Collector–Gate Voltage

VCER

380

VDC

Gate–Emitter Voltage

VGE

22

VDC

Collector Current–Continuous

@ TC = 25°C

IC

15

ADC

Total Power Dissipation

@ TC = 25°C

Derate above 25

°C

PD

136

1.0

Watts

W/

°C

Operating and Storage Temperature

Range

TJ, Tstg

–55 to

175

°C

N–CHANNEL IGBT

15 A, 350 V

VCE(on) = 1.8 V MAX

http://onsemi.com

TO–220

CASE 221A

STYLE 9

MARKING

DIAGRAMS

G

C

E

D2PAK

CASE 418B

STYLE 3

Device

Package

Shipping

ORDERING INFORMATION

MGP15N35CL

TO–220

50 Units/Rail

MGC15N35CL

Die Options

Not Applicable

MGB15N35CLT4

D2PAK

800 Tape & Reel

C

E

G

RGE

RG

GB15N35CL

ALYYWW

ALYYWW

GP15N35CL

A

= Assembly Location

WL, L

= Wafer Lot

YY, Y

= Year

WW, W = Work Week