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MAX3222CDWR Datasheet(PDF) 4 Page - Texas Instruments |
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MAX3222CDWR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 14 page MAX3222 3V TO 5.5V MULTICHANNEL RS232 LINE DRIVER/RECEIVER WITH ±15kV ESD PROTECTION SLLS408G − JANUARY 2000 − REVISED MARCH 2004 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 DRIVER SECTION electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 4 and Figure 5) PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT VOH High-level output voltage DOUT at RL = 3 kΩ to GND, DIN = GND 5 5.4 V VOL Low-level output voltage DOUT at RL = 3 kΩ to GND, DIN = VCC −5 −5.4 V IIH High-level input current VI = VCC ±0.01 ±1 µA IIL Low-level input current VI at GND ±0.01 ±1 µA VCC = 3.6 V, VO = 0 V IOS Short-circuit output current‡ VCC = 3.6 V, VO = 0 V ±35 ±60 mA IOS Short-circuit output current‡ VCC = 5.5 V, VO = 0 V ±35 ±60 mA ro Output resistance VCC, V+, and V− = 0 V, VO = ±2 V 300 10M Ω Ioff Output leakage current PWRDOWN = GND, VCC = 3 V to 3.6 V VO = ±12 V, ±25 µA Ioff Output leakage current PWRDOWN = GND, VCC = 4.5 V to 5.5 V VO = ±10 V, ±25 µA † All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. ‡ Short-circuit durations should be controlled to prevent exceeding the device absolute power-dissipation ratings, and not more than one output should be shorted at a time. NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. switching characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) (see Note 4 and Figure 5) PARAMETER TEST CONDITIONS MIN TYP† MAX UNIT Maximum data rate CL = 1000 pF, RL = 3 kΩ, 150 250 kbit/s Maximum data rate CL = 1000 pF, One DOUT switching, RL = 3 kΩ, See Figure 1 150 250 kbit/s tsk(p) Pulse skew§ CL = 150 pF to 2500 pF, See Figure 2 RL = 3 kΩ to 7 kΩ, 300 ns SR(tr) Slew rate, transition region RL = 3 kΩ to 7 kΩ, CL = 150 pF to 1000 pF 6 30 V/ µs SR(tr) Slew rate, transition region (See Figure 1) RL = 3 kΩ to 7 kΩ, VCC = 3.3 V CL = 150 pF to 2500 pF 4 30 V/ µs † All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C. § Pulse skew is defined as |tPLH − tPHL| of each channel of the same device. NOTE 4: Test conditions are C1−C4 = 0.1 µF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 µF, C2−C4 = 0.33 µF at VCC = 5 V ± 0.5 V. |
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