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SSM6K07FU Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM6K07FU Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page SSM6K07FU 2003-03-28 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6K07FU DC-DC Converters High Speed Switching Applications · Small package · Low on resistance : Ron = 130 mΩ max (@VGS = 10 V) : Ron = 220 mΩ max (@VGS = 4 V) · Low input capacitance : Ciss = 102 pF typ. : Crss = 22 pF typ. Maximum Ratings (Ta ==== 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±20 V DC ID 1.5 Drain current Pulse IDP 3.0 A Drain power dissipation PD (Note 1) 300 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note 1: Mounted on FR4 board. (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.32 mm 2 ´ 6) Marking Equivalent Circuit (top view) Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2J1D Weight: 6.8 mg (typ.) |
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