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MGS05N60D Datasheet(PDF) 1 Page - ON Semiconductor |
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1 / 6 page 1 Motorola IGBT Device Data Designer's™ Data Sheet Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. • Built–In Free Wheeling Diodes • Built–In Gate Protection Zener Diode • Industry Standard Package (TO92 — 1.0 Watt) • High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ ms • Robust High Voltage Termination • Robust Turn–Off SOA MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameters Symbol Value Unit Collector–Emitter Voltage VCES 600 Vdc Collector–Gate Voltage (RGE = 1.0 MΩ) VCGR 600 Vdc Gate–Emitter Voltage — Continuous VGES ± 15 Vdc Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) IC25 IC90 ICM 0.5 0.3 2.0 Adc Total Power Dissipation PD 1.0 Watt Operating and Storage Junction Temperature Range TJ, Tstg – 55 to 150 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case – IGBT Thermal Resistance — Junction to Ambient R θJC R θJA 25 125 °C/W Maximum Lead Temperature for Soldering Purposes, 1/8 ″ from case for 5 seconds TL 260 °C UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS (TC ≤ 150°C) Single Pulse Drain–to–Source Avalanche Energy – Starting @ TC = 25°C Energy – Starting @ TC = 125°C VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W EAS 125 40 mJ (1) Pulse width is limited by maximum junction temperature repetitive rating. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Designer’s is a trademark of Motorola, Inc. REV 2 Order this document by MGS05N60D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGS05N60D IGBT 0.5 A @ 25 °C 600 V CASE 029–05 STYLE 35 TO–226AE E C G C E G © Motorola, Inc. 1998 |
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