1

Motorola IGBT Device Data

Designer's™ Data Sheet

Insulated Gate Bipolar Transistor

N–Channel Enhancement–Mode Silicon Gate

This IGBT contains a built–in free wheeling diode and a gate

protection zener diodes. Fast switching characteristics result in

efficient operation at higher frequencies. This device is ideally

suited for high frequency electronic ballasts.

• Built–In Free Wheeling Diodes

• Built–In Gate Protection Zener Diode

• Industry Standard Package (TO92 — 1.0 Watt)

• High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and

dV/dt = 1000 V/

ms

• Robust High Voltage Termination

• Robust Turn–Off SOA

Parameters

Symbol

Value

Unit

Collector–Emitter Voltage

VCES

600

Vdc

Collector–Gate Voltage (RGE = 1.0 MΩ)

VCGR

600

Vdc

Gate–Emitter Voltage — Continuous

VGES

± 15

Vdc

Collector Current — Continuous @ TC = 25°C

IC25

IC90

ICM

0.5

0.3

2.0

Adc

Total Power Dissipation @ TC = 25°C

PD

1.0

Watt

Operating and Storage Junction Temperature Range

TJ, Tstg

– 55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case – IGBT

Thermal Resistance — Junction to Ambient

R

θJC

R

θJA

25

125

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 5 seconds

TL

260

°C

Single Pulse Drain–to–Source Avalanche

Energy – Starting @ TC = 25°C

VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25 W

EAS

125

40

mJ

(1) Pulse width is limited by maximum junction temperature repetitive rating.

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

REV 2

Order this document

by MGS13002D/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MGS13002D

IGBT

0.5 A @ 25

°C

600 V

CASE 029–05

STYLE 35

TO–226AE

E

C

G

C

E

G

© Motorola, Inc. 1998