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TS12N20CS Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS12N20CS Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 2 page  - 2 - TSC Rev. 1 05/2003 Absolute Maximum Ratings TA =25°C unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS +12 V Drain Current – Continuous ID 6A – Pulsed 25 A Power Dissipation (Steady State) PD 2.2 W Operating and Storage Junction Temperature Range TJ, TSTG - 55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA 56 °C/ W Thermal Resistance, Junction-to-Ball RθJR 4.5 °C/ W Thermal Resistance, Junction-to-Case RθJC 0.6 °C/ W Characteristics Symbol Conditions Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V, ID= 250µA 20 -- -- V Gate-Body Leakage IGGS VGS=±12V, VDS=0V -- -- ±150 nA Zero Gate Voltage Drain Current IDSS Tj=150°C, VDS=20V, VGS=0V -- -- 250 uA Drain to Drain Sense Leakage IDDS Tj=150°C, VDS=20V, VGS=0V -- -- 250 uA Static Drain-Source On-Resistance RDS(on) VGS= 4.5V, ID= 12A -- 3.9 -- mΩ Drain Sense On-Resistance RDSDS(on) VGS= 4.5V, ID= 0.35A -- 137 -- mΩ Gate Threshold Voltage VGS(th) VDS=VGS, ID= 250uA -- 1.3 -- V Total Gate Charge Qg VDS=20V, VGS= 4.5V, ID= 12A -- 19.8 -- nC Gate Resistance Rg VDS=0V, f =1MHz -- 0.4 -- Ohms Output Capacitance Coss VDS=20V, VGS=0V, f =1MHz -- 2.4 -- nF Input Capacitance Ciss VDS=20V, VGS=0V, f =1MHz -- 320 -- pF Reverse transfer capacitance Crss VDS=20V, VGS=0V, f =1MHz -- TBD -- pF Reverse Recovery time trr If = 12A, di/dt =100A/us -- -- 40 ns Source-Drain Diode Tj=150°C Forward On-Voltage VSD Is= 12A, VGS=0V -- 0.75 -- V Source-Drain Diode On-State Drain Current ID(on) VGS=4.5V, VDS=1V 25 -- -- A Avalanche Energy UIS Eas Single Pulse 10us, VDS>BVDSS 2.5 -- -- mJ TS12N20CS Electrical Specifications TA=25°C unless otherwise specified |
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