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SI4943BDY-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI4943BDY-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si4943BDY Vishay Siliconix New Product Document Number: 73073 S-41527—Rev. A, 16-Aug-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 300 600 900 1200 1500 1800 2100 04 8 12 16 20 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 5 10 15 20 25 30 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Coss Ciss VDS = 10 V ID = 8.4 A ID − Drain Current (A) VGS = 10 V ID = 8.4 A VGS = 4.5 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 2468 10 TJ = 150_C ID = 8.4 A 30 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) TJ = 25_C Crss VGS = 10 V |
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