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MJ10023 Datasheet(PDF) 6 Page - ON Semiconductor |
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MJ10023 Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 8 page MJ10023 6 Motorola Bipolar Power Transistor Device Data The Safe Operating Area figures shown in Figures 13 and 14 are specified for these devices under the test conditions shown. VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 2.0 5.0 10 20 50 1.0 10 1.0 0 VCEM, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS) 100 300 500 40 70 TC = 25°C 60 50 20 IC/IB ≥ 20 25 °C ≤ TJ ≤ 100°C 100 200 400 0.1 0.01 dc 200 400 700 30 10 0 10 µs (TURN–ON SWITCHING) 50 5.0 0.5 0.05 20 2.0 0.2 0.02 600 100 Figure 13. Maximum Forward Bias Safe Operating Area Figure 14. Maximum RBSOA, Reverse Bias Safe Operating Area 80 TURN–OFF LOAD LINE BONDING WIRE LTD THERMAL LTD SECOND BREAKDOWN LTD 2 V ≤ VBE(off) ≤ 8 V RBE = 24 Ω SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 13 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not der- ate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case tem- perature by using the appropriate curve on Figure 15. TJ(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current condition allowable dur- ing reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA character- istics. 0 TC, CASE TEMPERATURE (°C) 40 80 120 40 0 100 80 60 20 200 SECOND BREAKDOWN DERATING 160 THERMAL DERATING Figure 15. Power Derating |
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