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PEMH10 Datasheet(PDF) 4 Page - NXP Semiconductors |
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PEMH10 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2003 Oct 20 4 Philips Semiconductors Product specification NPN/NPN resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 47 kΩ PEMH10; PUMH10 THERMAL CHARACTERISTICS Notes 1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint. 2. Reflow soldering is the only recommended soldering method. CHARACTERISTICS Tamb =25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor Rth j-a thermal resistance from junction to ambient Tamb ≤ 25 °C SOT363 note 1 625 K/W SOT666 notes 1 and 2 625 K/W Per device Rth j-a thermal resistance from junction to ambient Tamb ≤ 25 °C SOT363 note 1 416 K/W SOT666 notes 1 and 2 416 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ICBO collector-base cut-off current VCB =50V; IE =0 −− 100 nA ICEO collector-emitter cut-off current VCE =30V; IB =0 −− 1 µA VCE =30V; IB = 0; Tj = 150 °C −− 50 µA IEBO emitter-base cut-off current VEB =5V; IC =0 −− 180 µA hFE DC current gain VCE =5V; IC = 10 mA 100 −− VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA −− 100 mV Vi(off) input-off voltage IC = 100 µA; VCE =5V − 0.6 0.5 V Vi(on) input-on voltage IC = 5 mA; VCE = 0.3 V 1.1 0.75 − V R1 input resistor 1.54 2.2 2.86 k Ω resistor ratio 17 21 26 Cc collector capacitance IE =ie = 0; VCB = 10 V; f = 1 MHz −− 2.5 pF R2 R1 -------- |
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