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FPD10000AF Datasheet(PDF) 3 Page - Filtronic Compound Semiconductors |
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FPD10000AF Datasheet(HTML) 3 Page - Filtronic Compound Semiconductors |
3 / 3 page PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT Phone: +1 408 850-5790 http://www.filtronic.co.uk/semis Revised: 12/07/04 Fax: +1 408 850-5766 Email: sales@filcsi.com • BIASING GUIDELINES Dual-bias (separate positive Drain and negative Gate supplies) circuits are recommended, requiring a regulated negative voltage supply for depletion-mode devices such as the FPD10000AF. The Gate bias supply should be capable of sinking / sourcing at least 10mA of current. The bias circuitry must be properly sequenced to ensure that the control Gate voltage (typically -0.6 to -1.0V) is applied to the device before the Drain voltage, otherwise large amounts of Drain-Source current will be drawn, potentially leading to instability and self- oscillation. The recommended 180 – 300 mA bias point is nominally a Class B/AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point, and significant current drive-up should be expected. If a Class A operation is desired, users should check the de-rating limits given in the previous section to ensure reliable operation. • PACKAGE OUTLINE (dimensions in millimeters – mm) All information and specifications subject to change without notice. PACKAGE MARKING CODE Example: f1ZD P3F f = Filtronic 1ZD = Lot and Date Code P2F = Status, Part Code, Part Type Status: D=Development P = Production Part Code denotes model (e.g. FPD10000AF) Part Type: F = FET (pHEMT) |
Similar Part No. - FPD10000AF |
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Similar Description - FPD10000AF |
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