1

Motorola Bipolar Power Transistor Device Data

High-Current Complementary

Silicon Power Transistors

. . . designed for use in high–power amplifier and switching circuit applications,

• High Current Capability — IC Continuous = 60 Amperes

• DC Current Gain — hFE = 15–100 @ IC = 50 Adc

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc

MAXIMUM RATINGS

Rating

Symbol

MJ14001

MJ14002

MJ14003

Unit

Collector–Emitter Voltage

VCEO

60

80

Vdc

Collector Base Voltage

VCBO

60

80

Vdc

Emitter–Base Voltage

VEBO

5

Vdc

Collector Current — Continuous

IC

60

Adc

Base Current — Continuous

IB

15

Adc

Emitter Current — Continuous

IE

75

Total Power Dissipation @ TC = 25_C

Derate above 25

_C

PD

300

17

Watts

W/

_C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 65 to + 200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

0.584

_C/W

150

Figure 1. Power Derating

TC, CASE TEMPERATURE (°C)

40

80

120

240

360

90

210

0

160

200

0

30

270

330

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MJ14001/D

MJ14002

MJ14001

MJ14003

*Motorola Preferred Device

60 AMPERES

COMPLEMENTARY

SILICON

POWER TRANSITORS

60 – 80 VOLTS

300 WATTS

*

NPN

PNP

*

CASE 197A–05

TO–204AE (TO–3)

REV 2