MJ16018 datasheet(4/8 Pages) ONSEMI

Part #	MJ16018

Description	NPN Silicon Power Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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MJ16018 MJW16018

4

Motorola Bipolar Power Transistor Device Data

Figure 9. Inductive Switching Crossover Time

Figure 10. (tsv) Storage Time versus IB1

Pulse Width

IC, COLLECTOR CURRENT (AMPS)

2

3

5

7

10

1

VBE(off) = 2 V

TC = 100°C

NO BAKER CLAMP

BAKER CLAMPED

Figure 11. Reverse Base Current versus

Off Voltage

IC, COLLECTOR CURRENT (AMPS)

2000

1000

500

100

50

20

PULSE WIDTH (

µs)

5

9

13

17

21

6

5

4

3

2

0

1

IC = 5 A

IB1 = 2 A

IB2 = 2 A OR

VBE = – 2 V

Figure 12. Inductive Switching Measurements

700

300

200

70

30

25

VBE(off), REVERSE BASE–EMITTER VOLTAGE (VOLTS)

6

5

– 1

– 2

– 3

– 4

4

3

2

1

IC = 5 A

IB1 = 2 A

VCE = 400 V

– 5

– 6

IC/IB = 2.5

2.5

5

tfi

trv

TIME

IC

90% IB1

IC pk

VCE(pk)

90% VCE(pk)

90% IC(pk)

10% VCE(pk)

10%

IC pk

2% IC

IB

tsv

tti

tc

VCE

TYPICAL INDUCTIVE SWITCHING CHARACTERISTICS

10

Figure 13. Maximum Forward Bias

Safe Operating Area

Figure 14. Maximum Reverse Bias

Safe Operating Area

100

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1

15

1K

30

20

2

50

1

0.5

0.3

0.2

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN

LIMIT

20

50

100

200

500

TC = 25°C

10

µs

1 ms

dc

5

3

MJ16018

MJW16018

30

300

16

VCE(pk), PEAK COLLECTOR VOLTAGE (VOLTS)

0

2K

12

8

4

400

800

1.8K

1K

1.6K

VBE(off) = 0 V

0

1.2K

200

600

1.4K

14

10

6

2

VBE(off) = 2 V

IC/IB1 = 2.5, 5

TC ≤ 100°C

GUARANTEED SAFE OPERATING AREA LIMITS

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