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TSC5304DCH Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSC5304DCH Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  Preliminary TS5304D Preliminary 1-1 2004/09 rev. A TSC5304D High Voltage NPN Transistor with Diode BVCEO = 400V BVCBO = 750V Ic = 4A VCE (SAT), = 1.2V @ Ic / Ib = 4A / 1A Ordering Information Part No. Packing Package TSC5304DCH Tube TO-251 TSC5304DCP T&R TO-252 Features Built-in free-wheeling diode makes efficient anti saturation operation. No need to interest an hfe value because of low variable storage-time spread even though comer spirit product. Low base drive requirement. Suitable for half bridge light ballast applications. Structure Silicon triple diffused type. NPN silicon transistor with Diode Block Diagram Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 750V V Collector-Emitter Voltage VCEO 400V V Emitter-Base Voltage VEBO 10 V DC 4 Collector Current Pulse IC 8 A DC 1.5 Base Current Pulse IB 4 A Total Power Dissipation (Tc=25 oC) PD 35 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 65 to +150 oC Thermal Resistance Junction to Case RΘjc 6 oC/W Thermal Resistance Junction to Ambient RΘja 90 oC/W Note: 1. Single pulse, Pw = 300uS, Duty <= 2% Pin assignment: 1. Base 2. Collector 3. Emitter |
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