MRF6522-70R3

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

65

—

—

Vdc

Zero Gate Voltage Drain Current

—

—

10

µAdc

Gate-Source Leakage Current

—

—

1

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

2

3

4

Vdc

Gate Quiescent Voltage

3

4

5

Vdc

Drain-Source On-Voltage

—

0.15

0.6

Vdc

Forward Transconductance

2

3

—

S

DYNAMIC CHARACTERISTICS

Input Capacitance (1)

—

130

—

pF

Output Capacitance

41

47

52

pF

Reverse Transfer Capacitance

2.4

3

3.4

pF

FUNCTIONAL TESTS (In Motorola Test Fixture)

Output Power (2)

P1dB

73

80

—

W

Common-Source Amplifier Power Gain @ P1dB (Min) (2)

14

16

18

dB

47

51

—

%

Drain Efficiency @ P1dB (2)

—

58

—

%

f = 921 MHz and 960 MHz

f = 940 MHz)

IRL

—

—

—

—

-10

-15

dB

Output Mismatch Stress (2)

VSWR = 5:1, All Phase Angles)

Ψ

No Degradation In Output Power

Before and After Test

(1) Value excludes the input matching.

(2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch-to-batch

consistency.

Freescale Semiconductor, Inc.

For More Information On This Product,

Go to: www.freescale.com