TSM8405P datasheet(2/6 Pages) TSC

Part #	TSM8405P

Description	Single P-Channel 1.8V Specified MicroSURF MOSFET

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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2 / 6 page

TSM8405P

2-2

2003/10 rev. G

Electrical Characteristics

Ta = 25

oC, unless otherwise noted

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = - 250uA

BVDSS

- -

--

-12

V

VGS = - 4.5V, ID = -1.0A

--

50

VGS = - 2.5V, ID = -1.0A

--

70

Drain-Source On-State Resistance

VGS = - 1.8V, ID = -1.0A

RDS(ON)

--

90

mΩ

Gate Threshold Voltage

VDS = VGS, ID = - 250uA

VGS(TH)

--

- 0.7

--

V

Ta=25

oC

--

- 1.0

Zero Gate Voltage Drain Current

VDS =-12V,

VGS = 0V

Ta=70

oC

IDSS

--

- 5.0

uA

Gate Body Leakage

VGS = ± 8V, VDS = 0V

IGSS

--

± 100

nA

Dynamic

Total Gate Charge

VDS = - 6V, ID = - 1.0A,

VGS = - 4.5V

Qg

--

9.0

--

nC

Input Capacitance

Ciss

--

800

--

Output Capacitance

Coss

--

250

--

Reverse Transfer Capacitance

VDS = - 12V, VGS = 0V,

f = 1.0MHz

Crss

--

100

--

pF

Source-Drain Diode

Max. Diode Forward Current

IS

--

- 1.0

A

Diode Forward Voltage

IS = - 1.0A, VGS = 0V

VSD

--

- 0.7.1

- 1.2

V

Source-Drain Reverse Recovery

Time

IS = - 1.0A, VGS = 0V,

di / dt = 100A / uS

Trr

--

40

--

nS

Note : pulse test: pulse width <=300uS, duty cycle <=2%

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