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IHP10T120 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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IHP10T120 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 14 page IHP10T120 Soft Switching Series Power Semiconductors 4 Rev. 2 Jun-04 Switching Characteristic, Inductive Load, at Tj=150 °C Value Parameter Symbol Conditions min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) - 45 - Rise time tr - 24 - Turn-off delay time td(off) - 592 - Fall time tf - 177 - ns Turn-on energy Eon - 0.83 - Turn-off energy Eoff - 1.19 - Total switching energy Ets Tj=150 °C, VCC=610V,IC=10A, VGE= 0 /15V, RG= 81 Ω Lσ 1) =180nH, Cσ 1) =39pF Energy losses include “tail” and diode reverse recovery. - 2.02 - mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr - 185 - ns Diode reverse recovery charge Qrr - 630 - nC Diode peak reverse recovery current Irrm Tj=150 °C VR=800V, IF=4A, diF/dt=750A/ µs - 8.1 - A 1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E. |
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