IHP10T120 datasheet(4/14 Pages) INFINEON

Part #	IHP10T120

Description	Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

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Manufacturer	INFINEON [Infineon Technologies AG]

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IHP10T120

Soft Switching Series

Power Semiconductors

4

Rev. 2 Jun-04

Switching Characteristic, Inductive Load, at Tj=150

°C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

td(on)

-

45

-

Rise time

tr

-

24

-

Turn-off delay time

td(off)

-

592

-

Fall time

tf

-

177

-

ns

Turn-on energy

Eon

-

0.83

-

Turn-off energy

Eoff

-

1.19

-

Total switching energy

Ets

Tj=150

°C,

VCC=610V,IC=10A,

VGE= 0 /15V,

RG= 81

Ω

Lσ

1) =180nH,

Cσ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-

2.02

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

trr

-

185

-

ns

Diode reverse recovery charge

Qrr

-

630

-

nC

Diode peak reverse recovery current

Irrm

Tj=150

°C

VR=800V, IF=4A,

diF/dt=750A/

µs

-

8.1

-

A

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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