MJD50 datasheet(2/6 Pages) ONSEMI

Part #	MJD50

Description	NPN SILICON POWER TRANSISTORS

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MJD47 MJD50

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS – continued (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS — continued

Collector Cutoff Current

(VCE = 350 Vdc, VBE = 0)

MJD47

(VCE = 500 Vdc, VBE = 0)

MJD50

ICES

—

0.1

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

—

1

mAdc

ON CHARACTERISTICS (1)

DC Current Gain

(IC = 0.3 Adc, VCE = 10 Vdc)

(IC = 1 Adc, VCE = 10 Vdc)

hFE

30

10

150

—

Collector–Emitter Saturation Voltage

(IC = 1 Adc, IB = 0.2 Adc)

VCE(sat)

—

1

Vdc

Base–Emitter On Voltage

(IC = 1 Adc, VCE = 10 Vdc)

VBE(on)

—

1.5

Vdc

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)

fT

10

—

MHz

Small–Signal Current Gain

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe

25

—

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2%.

25

Figure 1. Power Derating

T, TEMPERATURE (

°C)

0

50

75

100

125

150

20

15

10

5

Figure 2. Switching Time Equivalent Circuit

APPROX

+11 V

RB

– 4 V

t1

SCOPE

VCC

RC

51

RB and RC VARIED TO OBTAIN

DESIRED CURRENT LEVELS.

2.5

0

2

1.5

1

0.5

TA TC

TC

DUTY CYCLE

≈ 2%

APPROX – 9 V

t1 ≤ 7 ns

10 < t2 < 500 µs

t3 < 15 ns

Vin 0

Cjd << Ceb

Vin

t2

t3

APPROX

+11 V

Vin

TURN–ON PULSE

TA (SURFACE MOUNT)

VEB(off)

TURN–OFF PULSE

TYPICAL CHARACTERISTICS

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