PRELIMINARY
256K x 16 Static RAM
CY7C1041AV33/
GVT73256A16
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
June 15, 2000
33
Features
• Fast access times: 10, 12 ns
• Fast OE access times: 5, 6, and 7 ns
• Single +3.3V ±0.3V power supply
• Fully static—no clock or timing strobes necessary
• All inputs and outputs are TTL-compatible
• Three state outputs
• Center power and ground pins for greater noise
immunity
• Easy memory expansion with CE and OE options
• Automatic CE power-down
• High-performance, low power consumption, CMOS
double-poly, double-metal process
• Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil
TSOP
Functional Description
The CY7C1049AV33\GVT73512A8 is organized as a 262,144
x 16 SRAM using a four-transistor memory cell with a high-per-
formance, silicon gate, low-power CMOS process. Cypress
SRAMs are fabricated using double-layer polysilicon, dou-
ble-layer metal technology.
This device offers center power and ground pins for improved
performance and noise immunity. Static design eliminates the
need for external clocks or timing strobes. For increased sys-
tem flexibility and eliminating bus contention problems, this de-
vice offers Chip Enable (CE), separate Byte Enable controls
(BLE and BHE) and Output Enable (OE) with this organization.
The device offers a low-power standby mode when chip is not
selected. This allows system designers to meet low standby
power requirements.
Functional Block Diagram
CE#
COLUMN DECODER
MEMORY ARRAY
512 ROWS X 256 X 16
COLUMNS
WE#
OE#
DQ8
DQ1
POWER
DOWN
A16
A0
DQ16
DQ9
BHE#
BLE#
VCC
VSS
Top View
SOJ/TSOP II
WE
1
2
3
4
5
6
7
8
9
10
11
14
31
32
36
35
34
33
37
40
39
38
12
13
41
44
43
42
16
15
29
30
VCC
A5
A6
A7
A8
A0
A1
OE
VSS
A17
DQ16
A2
CE
DQ3
DQ1
DQ2
BHE
A3
A4
18
17
20
19
DQ4
27
28
25
26
22
21
23
24
VSS
A16
A15
BLE
VCC
DQ15
DQ14
DQ13
DQ12
DQ11
DQ10
DQ9
A14
A13
A12
A11
A9
A10
NC
DQ5
DQ6
DQ7
DQ8
Pin Configuration
Selection Guide
CY7C1049AV33-10/
GVT73512A8-10
CY7C1049AV33-12/
GVT73512A8-12
Maximum Access Time (ns)
10
12
Maximum Operating Current (mA)
240
210
Maximum CMOS Standby Current (mA)
Com’l/Ind’l
10
10
Com’l
L3.0
3.0
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