MJE18002 MJF18002

4

Motorola Bipolar Power Transistor Device Data

hFE, FORCED GAIN

IC, COLLECTOR CURRENT (AMPS)

0

500

1000

1500

2000

2500

5

7

9

11

13

15

0

500

1000

1500

2000

2500

3000

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

500

1000

1500

2000

2500

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

500

1000

1500

2000

2500

3000

3500

4000

4500

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

50

100

150

200

250

300

350

400

450

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0

100

200

300

400

500

600

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 7. Resistive Switching, ton

IC/IB = 5

IC/IB = 10

TJ = 125°C

TJ = 25°C

IB(off) = IC/2

VCC = 300 V

PW = 20

µs

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 8. Resistive Switching, toff

IB(off) = IC/2

VCC = 300 V

PW = 20

µs

TJ = 25°C

TJ = 125°C

IC/IB = 10

IC/IB = 5

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Figure 9. Inductive Storage Time, tsi

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 25°C

TJ = 125°C

IC/IB = 5

IC/IB = 10

5

7

9

11

13

15

Figure 10. Inductive Storage Time

TJ = 25°C

TJ = 125°C

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

IC = 1 A

IC = 0.4 A

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 25°C

TJ = 125°C

tc

tfi

tc

tfi

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 11. Inductive Switching, tc & tfi, IC/IB = 5

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

IC, COLLECTOR CURRENT (AMPS)

Figure 12. Inductive Switching, tc & tfi, IC/IB = 10

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

TJ = 25°C

TJ = 125°C

tc

tfi

tc

tfi