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33C408RTFB-25 Datasheet(PDF) 6 Page - Maxwell Technologies |
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33C408RTFB-25 Datasheet(HTML) 6 Page - Maxwell Technologies |
6 / 12 page 6 All data sheets are subject to change without notice ©2002 Maxwell Technologies All rights reserved. 4 Megabit (512K x 8-Bit) CMOS SRAM 33C408 04.16.02 REV 8 Write Pulse Width (OE High) -20 -25 -30 9, 10, 11 t WP 14 15 17 -- -- -- -- -- -- ns Write Recovery Time -20 -25 -30 9, 10, 11 t WR 0 0 0 -- -- -- -- -- -- ns Write to Output in High-Z -20 -25 -30 9, 10, 11 t WHZ -- -- -- 5 5 6 -- -- -- ns Write Pulse Width (OE Low) -20 -25 -30 9, 10, 11 t WP1 -- -- -- 20 25 30 -- -- -- ns Data to Write Time Overlap -20 -25 -30 9, 10, 11 t DW 9 10 11 -- -- -- -- -- -- ns End Write to Output Low-Z -20 -25 -30 9, 10, 11 t OW -- -- -- 6 7 8 -- -- -- ns Data Hold from Write Time -20 -25 -30 9, 10, 11 t DH 0 0 0 -- -- -- -- -- -- ns TABLE 9. 33C408 AC CHARACTERISTICS FOR WRITE CYCLE (V CC = 5V + 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED) PARAMETER SUBGROUPS SYMBOL MIN TYP MAX UNIT |
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