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28C256TRT4DE-12 Datasheet(PDF) 4 Page - Maxwell Technologies |
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28C256TRT4DE-12 Datasheet(HTML) 4 Page - Maxwell Technologies |
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4 / 14 page  4 All data sheets are subject to change without notice ©2001 Maxwell Technologies All rights reserved. 256K EEPROM (32K x 8-Bit) EEPROM 28C256T 02.18.02 Rev5 TABLE 7. 28C256T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION1 (V CC = 5V ±10%, TA = -55 TO 125 ° C UNLESS OTHERWISE SPECIFIED) 1. Test conditions: Input pulse levels - 0V to 3V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); ref- erence levels for measuring timing - 0.8V/1.8V. PARAMETER SUBGROUPS SYMBOL MIN MAX UNITS Address Access Time CE = OE = V IL, WE = VIH -120 -150 9, 10, 11 t ACC -- -- 120 150 ns CE to Output Delay OE = V IL, WE = VIH -120 -150 9, 10, 11 t CE -- -- 120 150 ns OE to Output Delay CE = V IL, WE = VIH -120 -150 9, 10, 11 t OE 0 0 75 75 ns Output Hold from Address CE = OE = V IL, WE = VIH -120 -150 9, 10, 11 t OH 0 0 -- -- ns OE (CE) High to Output Float CE = V IL, WE = VIH 2 -120 -150 2. t DF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 9, 10, 11 t DF 0 0 50 50 ns TABLE 8. 28C256T AC ELECTRICAL CHARACTERISTICS FOR PAGE/BYTE ERASE AND WRITE OPERATIONS (V CC = 5V ±10%, TA = -55 TO 125 ° C UNLESS OTHERWISE SPECIFIED) PARAMETER SUBGROUPS SYMBOL MIN1 TYP MAX UNITS Address Setup Time -120 -150 t AS 0 0 -- -- -- -- ns 9, 10, 11 9, 10, 11 CE to Write Setup Time -120 -150 t CS 2 0 0 -- -- -- -- ns 9, 10, 11 9, 10, 11 WE to Write Setup Time -120 -150 t WS 3 0 0 -- -- -- -- ns 9, 10, 11 9, 10, 11 WE Hold Time -120 -150 9, 10, 11 t WH 3 0 0 -- -- ns |
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