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MJF18204 Datasheet(PDF) 7 Page - ON Semiconductor |
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MJF18204 Datasheet(HTML) 7 Page - ON Semiconductor |
7 / 12 page MJE18204 MJF18204 7 Motorola Bipolar Power Transistor Device Data Figure 19. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 19 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figures 21 and 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For induc- tive loads, high voltage and current must be sustained simultaneously during turn–off with the base–to–emitter junction reverse biased. The safe level is specified as a reverse–biased safe operating area (Figure 17). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TC, CASE TEMPERATURE (°C) 1.0 0.8 0.6 0.4 0.2 0 160 140 120 100 80 60 40 20 SECOND BREAKDOWN DERATING THERMAL DERATING TYPICAL STATIC CHARACTERISTICS Figure 20. Dynamic Saturation Voltage Measurements Figure 21. Inductive Switching Measurements TYPICAL SWITCHING CHARACTERISTICS (IB1 = IB2 FOR ALL CURVES) TIME 10 4 0 8 2 0 6 8 6 2 4 9 7 5 3 1 1 3 5 7 VCE 0 V IB 90% IB 1 µs 3 µs dyn 1 µs dyn 3 µs IB IC Vclamp tsi tc tfi 90% IC 10% IC 90% IB1 10% Vclamp TIME |
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