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AS7C251MNTD18A Datasheet(PDF) 7 Page - Alliance Semiconductor Corporation

Part # AS7C251MNTD18A
Description  2.5V 1M x 18 Pipelined SRAM with NTD
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C251MNTD18A Datasheet(HTML) 7 Page - Alliance Semiconductor Corporation

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AS7C251MNTD18A
12/23/04, v.2.2
Alliance Semiconductor
P. 7 of 18
State diagram for NTD SRAM
Absolute maximum ratings
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions may affect reliability.
Recommended operating conditions
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.3
+3.6
V
Input voltage relative to GND (input pins)
VIN
–0.3
VDD + 0.3
V
Input voltage relative to GND (I/O pins)
VIN
–0.3
VDDQ + 0.3
V
Power dissipation
PD
–1.8
W
DC output current
IOUT
–50
mA
Storage temperature
Tstg
–65
+150
oC
Temperature under bias (junction)
Tbias
–65
+150
oC
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
2.375
2.5
2.625
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V
Dsel
Read
Burst
Burst
Write
Read
Write
Burst
Read
Dsel
Read
Burst
Write
Dse
l
Writ
e
Burst
Dsel
Burst
Burst
Write
Read


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