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AS7C251MFT18A-10TQI Datasheet(PDF) 8 Page - Alliance Semiconductor Corporation

Part # AS7C251MFT18A-10TQI
Description  2.5V 1M x 18 flowthrough burst synchronous SRAM
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C251MFT18A-10TQI Datasheet(HTML) 8 Page - Alliance Semiconductor Corporation

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AS7C251MFT18A
12/24/04, v. 1.2
Alliance Semiconductor
8 of 19
Absolute maximum ratings
Note: Stresses greater than those listed in this table may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions may affect reliability.
Recommended operating conditions
Parameter
Symbol
Min
Max
Unit
Power supply voltage relative to GND
VDD, VDDQ
–0.3
+3.6
V
Input voltage relative to GND (input pins)
VIN
–0.3
VDD + 0.3
V
Input voltage relative to GND (I/O pins)
VIN
–0.3
VDDQ + 0.3
V
Power dissipation
PD
–1.8
W
DC output current
IOUT
–20 mA
mA
Storage temperature
Tstg
–65
+150
oC
Temperature under bias
Tbias
–65
+135
oC
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage for inputs
VDD
2.375
2.5
2.625
V
Supply voltage for I/O
VDDQ
2.375
2.5
2.625
V
Ground supply
Vss
0
0
0
V


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