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AS7C251MFT36A-10TQIN Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation

Part # AS7C251MFT36A-10TQIN
Description  2.5V 1M x 32/36 Flow-through synchronous SRAM
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C251MFT36A-10TQIN Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation

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January 2005
Copyright © Alliance Semiconductor. All rights reserved.
®
1/17/05, v 1.2
Alliance Semiconductor
1 of 19
2.5V 1M
× 32/36 Flow-through synchronous SRAM
AS7C251MFT32A
AS7C251MFT36A
Features
• Organization: 1,048,576 words × 32 or 36 bits
• Fast clock to data access: 7.5/8.5/10 ns
•Fast OE access time: 3.5/4.0 ns
• Fully synchronous flow-through operation
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
• Multiple chip enables for easy expansion
• 2.5V core power supply
• Linear or interleaved burst control
• Snooze mode for reduced power-standby
• Common data inputs and data outputs
Logic block diagram
Selection guide
-75
-85
-10
Units
Minimum cycle time
8.5
10
12
ns
Maximum clock access time
7.5
8.5
10
ns
Maximum operating current
325
300
275
mA
Maximum standby current
130
130
130
mA
Maximum CMOS standby current (DC)
90
90
90
mA
A[19:0]
20
18
20
20
Q0
Q1
1M × 32/36
Memory
array
Burst logic
CLK
CLR
CE
Address
DQ
CE
CLK
DQd
CLK
DQ
Byte write
registers
register
DQc
CLK
DQ
Byte write
registers
DQb
CLK
DQ
Byte write
registers
DQa
CLK
DQ
Byte write
registers
Enable
CLK
DQ
register
Enable
CLK
DQ
delay
register
CE
Output
registers
Input
registers
Power
down
DQ[a:d]
4
32/36
GWE
BWE
BWd
ADV
ADSC
ADSP
CLK
CE0
CE1
CE2
BWc
BWb
BWa
OE
ZZ
LBO
OE
CLK
CLK
32/36
32/36
2
2


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