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VEC2602 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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VEC2602 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page VEC2602 No.8021-2/6 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr See specified Test Circuit. 28 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 37 ns Fall Time tf See specified Test Circuit. 34 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=4A 8.5 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4A 1.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4A 1.3 nC Diode Forward Voltage VSD IS=4A, VGS=0 0.83 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance yfs VDS=--10V, ID=--1.5A 2.0 3.4 S RDS(on)1 ID=--1.5A, VGS=--10V 65 86 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--0.7A, VGS=--4V 117 168 m Ω Input Capacitance Ciss VDS=--10V, f=1MHz 510 pF Output Capacitance Coss VDS=--10V, f=1MHz 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr See specified Test Circuit. 17 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 53 ns Fall Time tf See specified Test Circuit. 35 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--3A 11 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--3A 2.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--3A 1.7 nC Diode Forward Voltage VSD IS=--3A, VGS=0 --0.87 --1.2 V Package Dimensions Electrical Connection unit : mm 2227A 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : VEC8 2.9 0.65 0.3 123 4 87 6 5 0.15 87 6 5 123 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view |
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