MJE700 datasheet(4/6 Pages) ONSEMI

Part #	MJE700

Description	DARLINGTON POWER TRANSISTORS COMPLEMENTARY

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Manufacturer	ONSEMI [ON Semiconductor]

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MJE700,T MJE702 MJE703 MJE800,T MJE802 MJE803

4

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)

PNP

MJE700, T Series

NPN

MJE800, T Series

Figure 10. DC Current Gain

Figure 11. Collector Saturation Region

Figure 12. “On” Voltages

0.04

IC, COLLECTOR CURRENT (AMP)

300

0.06

0.2

2.0 k

800

4.0 k

VCE = 3.0 V

TJ = 125°C

3.0 k

0.1

0.6

25

°C

– 55

°C

1.0 k

0.4

1.0

6.0 k

400

600

2.0

4.0

0.04

300

0.06

0.2

2.0 k

800

4.0 k

3.0 k

0.1

0.6

1.0 k

0.4

1.0

6.0 k

400

600

2.0

4.0

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1

0.2

0.5

10

2.0

5.0

IC =

0.5 A

1.0 A

1.0

TJ = 25°C

3.0

1.0

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.0

2.2

1.8

0.6

0.2

0.06

0.2

2.0

0.1

0.6

0.4

1.0

4.0

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.0

2.2

1.8

0.6

0.2

0.06

0.2

2.0

0.1

0.6

0.4

1.0

4.0

20

50

100

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1

0.2

0.5

10

2.0

5.0

1.0

3.0

1.0

20

50

100

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

2.0 A

4.0 A

TJ = 25°C

VCE = 3.0 V

TJ = 125°C

25

°C

– 55

°C

IC =

0.5 A

1.0 A

TJ = 25°C

2.0 A

4.0 A

VBE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

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