AS7C1025B-20TJC datasheet(3/9 Pages) ALSC

Part #	AS7C1025B-20TJC

Description	5V 128K X 8 CMOS SRAM (Center power and ground)

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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3 / 9 page

AS7C1025B

3/26/04, v. 1.3

Alliance Semiconductor

P. 3 of 9

®

VIL min = -1.0V for pulse width less than 5ns

VIH max = VCC+2.0V for pulse width less than 5ns.

Recommended operating conditions

Parameter

Symbol

Min

Nominal

Max

Unit

Supply voltage

VCC

4.5

5.0

5.5

V

Input voltage

VIH

2.2

–

VCC + 0.5

V

VIL

–0.5

–

0.8

V

Ambient operating temperature

commercial

TA

0–

70

o C

industrial

TA

–40

–

85

o C

DC operating characteristics (over the operating range)1

Parameter

Symbol

Test conditions

-10

-12

-15

-20

Unit

Min Max Min

Max Min Max Min Max

Input leakage current

| I

LI |

VCC = Max, VIN = GND to VCC

–1

–

1

–

1

–

1

µA

Output leakage

current

| I

LO |

VCC = Max, CE = VIH,

Vout = GND to VCC

–1

–

1

–

1

–

1

µA

Operating power

supply current

ICC

VCC = Max

CE

≤ V

IL, f = fMax, IOUT = 0 mA

–

110

–

100

–

90

–

80

mA

Standby power supply

current1

ISB

VCC = Max

CE

≥ V

IH, f = fMax

–50

–

45

–

45

–

40

mA

ISB1

VCC = Max

CE

≥ V

CC–0.2 V,

VIN ≤ 0.2 V or VIN ≥ VCC –0.2 V,

f = 0

–

10

mA

Output voltage

VOL

IOL = 8 mA, VCC = Min

–

0.4

–

0.4

–

0.4

–

0.4

V

VOH

IOH = –4 mA, VCC = Min

2.4

–

2.4

–

2.4

–

V

Capacitance (f = 1 MHz, Ta = 25

o C, V

CC = NOMINAL)

2

Parameter

Symbol

Signals

Test conditions

Max

Unit

Input capacitance

CIN

A, CE, WE, OE

VIN = 0 V

5

pF

I/O capacitance

CI/O

I/O

VIN = VOUT = 0 V

7

pF

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AS7C1025B-20TJC Datasheet(PDF) 3 Page - Alliance Semiconductor Corporation

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