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MJF6668 Datasheet(PDF) 4 Page - ON Semiconductor |
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MJF6668 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 8 page MJF6388 MJF6668 4 Motorola Bipolar Power Transistor Device Data t, TIME (ms) 0.01 0.01 0.05 1 2 5 10 20 50 500 100K 0.1 0.5 0.2 1 0.2 0.1 0.05 R θJC(t) = r(t) RθJC R θJC = °C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) R θJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE Figure 5. Thermal Response 0.5 D = 0.5 0.3 0.03 0.02 0.02 100 200 3 30 0.3 300 1K 2K 5K 10K 20K 50K 3K 30K 0.2 0.1 0.05 TC, CASE TEMPERATURE (°C) 0 40 120 160 0.6 SECOND BREAKDOWN DERATING 1 0.8 0.4 0.2 60 100 140 80 THERMAL DERATING 20 Figure 6. Maximum Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second break- down. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa- tion than the curves indicate. The data of Figure 4 is based on TJ(pk) = l50_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150 _C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. Figure 7. Typical Small–Signal Current Gain f, FREQUENCY (kHz) TC = 25°C VCE = 4 Vdc IC = 3 Adc 10,000 200 100 1000 500 300 10 30 2000 3000 5000 1 1000 50 10 5 100 500 2 20 200 20 50 f, FREQUENCY (kHz) 10,000 200 100 1000 500 10 2000 5000 1 1000 50 10 5 100 500 2 20 200 20 50 NPN MJF6388 PNP MJF6668 TC = 25°C VCE = 4 VOLTS IC = 3 AMPS 3 30 300 70 7 |
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