IS62C1024

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. G

01/14/00

Symbol

Parameter

Value

Unit

Terminal Voltage with Respect to GND

–0.5 to +7.0

V

Temperature Under Bias

–10 to +85

°C

Storage Temperature

–65 to +150

°C

Power Dissipation

1.5

W

DC Output Current (LOW)

20

mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-

nent damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

Symbol

Parameter

Conditions

Max.

Unit

Input Capacitance

6

pF

Output Capacitance

8

pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

Output HIGH Voltage

2.4

—

V

Output LOW Voltage

—

0.4

V

Input HIGH Voltage

2.2

V

–0.3

0.8

V

Input Leakage

GND

Com.

–55

µA

Ind.

–10

10

Output Leakage

GND

Com.

–55

µA

Ind.

–10

10

Notes:

TRUTH TABLE

Mode

WE

CE1

CE2

OE

I/O Operation

Vcc Current

Not Selected

X

H

X

X

High-Z

(Power-down)

X

X

L

X

High-Z

Output Disabled H

L

H

H

High-Z

Read

H

L

H

L

Write

L

L

H

X