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K4E660412E-JI45 Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4E660412E-JI45 Datasheet(HTML) 4 Page - Samsung semiconductor |
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4 / 21 page  CMOS DRAM K4E660412E,K4E640412E Industrial Temperature *Note : ICC1 , ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 and ICC6, address can be changed maximum once while RAS=V IL. In ICC4, address can be changed maximum once within one EDO mode cycle time, tHPC. DC AND OPERATING CHARACTERISTICS (Continued) ICC1 * : Operating Current (RAS and CAS, Address cycling @ tRC =min.) ICC2 : Standby Current (RAS=CAS=W=V IH) ICC3 * : RAS-only Refresh Current (CAS=V IH, RAS, Address cycling @ tRC=min.) ICC4 * : Extended Data Out Mode Current (RAS=VIL , CAS, Address cycling @ tHPC=min.) ICC5 : Standby Current (RAS=CAS=W=V CC-0.2V) ICC6 * : CAS-Before-RAS Refresh Current (RAS and CAS cycling @ tRC =min) ICC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=CAS-before-RAS cycling or 0.2V W, OE =VIH, Address=Don ′t care, DQ=Open, TRC=31.25us ICCS : Self Refresh Current RAS=CAS=0.2V, W=OE=A0 ~ A12(A11)=V CC -0.2V or 0.2V, DQ0 ~ DQ3=V CC-0.2V, 0.2V or Open Symbol Power Speed Max Units K4E660412E K4E640412E ICC1 Don ′t care -45 -50 -60 90 80 70 120 110 100 mA mA mA ICC2 Normal L Don ′t care 1 1 1 1 mA mA ICC3 Don ′t care -45 -50 -60 90 80 70 120 110 100 mA mA mA ICC4 Don ′t care -45 -50 -60 100 90 80 100 90 80 mA mA mA ICC5 Normal L Don ′t care 0.5 200 0.5 200 mA uA ICC6 Don ′t care -45 -50 -60 120 110 100 120 110 100 mA mA mA ICC7 L Don ′t care 350 350 uA ICCS L Don ′t care 350 350 uA |
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