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AS7C25512NTF36A-10TQCN Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation

Part # AS7C25512NTF36A-10TQCN
Description  2.5V 512K x 32/36 Flowthrough Synchronous SRAM with NTD
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C25512NTF36A-10TQCN Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation

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April 2005
Copyright © Alliance Semiconductor. All rights reserved.
®
AS7C25512NTF32A
AS7C25512NTF36A
4/21/05, v 1.2
Alliance Semiconductor
P. 1 of 18
2.5V 512K × 32/36 Flowthrough Synchronous SRAM with NTDTM
Features
• Organization: 524,288 words × 32 or 36 bits
•NTDarchitecture for efficient bus operation
• Fast clock to data access: 7.5/8.5/10 ns
•Fast OE access time: 3.5/4.0 ns
• Fully synchronous operation
• Flow-through mode
• Asynchronous output enable control
• Available in 100-pin TQFP package
• Individual byte write and global write
• Clock enable for operation hold
• Multiple chip enables for easy expansion
• 2.5V core power supply
• Self-timed write cycles
• Interleaved or linear burst modes
• Snooze mode for standby operation
Logic block diagram
Selection guide
-75
-85
-10
Units
Minimum cycle time
8.5
10
12
ns
Maximum clock access time
7.5
8.5
10
ns
Maximum operating current
275
250
230
mA
Maximum standby current
90
80
80
mA
Maximum CMOS standby current (DC)
60
60
60
mA
Address
D
Q
CLK
register
Output
Buffer
DQ[a,b,c,d]
19
19
CLK
CE0
CE1
CE2
A[18:0]
OE
CEN
Control
CLK
logic
Data
D
Q
CLK
Input
Register
32/36
32/36
OE
512K x 32/36
SRAM
Array
R/W
DQ[a,b,c,d]
BWb
BWd
CLK
Q
D
ADV / LD
LBO
Burst logic
addr. registers
Write delay
19
ZZ
CLK
32/36
32/36
32/36
32/36
BWc
BWa


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