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MJL16218 Datasheet(PDF) 1 Page - ON Semiconductor

Part # MJL16218
Description  POWER TRANSISTOR
Download  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJL16218 Datasheet(HTML) 1 Page - ON Semiconductor

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Motorola Bipolar Power Transistor Device Data
Designer's™ Data Sheet
SCANSWITCH™
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJL16218 is a state–of–the–art SWITCHMODE
™ bipolar power transistor. It is
specifically designed for use in horizontal deflection circuits for 20 mm diameter neck,
high and very high resolution, full page, monochrome monitors.
• 1500 Volt Collector–Emitter Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Application Specific State–of–the–Art Die Design
• Fast Switching:
175 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage:
0.2 Volts at 5.0 Amps Collector Current and 2.0 A Base Drive
• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES
• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
8.0 Volts (Min)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Breakdown Voltage
VCES
1500
Vdc
Collector–Emitter Sustaining Voltage
VCEO(sus)
650
Vdc
Emitter–Base Voltage
VEBO
8.0
Vdc
Collector Current — Continuous
— Pulsed (1)
IC
ICM
15
20
Adc
Base Current — Continuous
— Pulsed (1)
IB
IBM
7.0
14
Adc
Maximum Repetitive Emitter–Base
Avalanche Energy
W (BER)
0.2
mJ
Total Power Dissipation @ TC = 25°C
@ TC = 100°C
Derated above TC = 25°C
PD
170
39
1.49
Watts
W/
°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 125
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
R
θJC
0.67
°C/W
Lead Temperature for Soldering Purposes
1/8
″ from the case for 5 seconds
TL
275
°C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤ 10%.
(2) Proper strike and creepage distance must be provided.
Designer’s and SCANSWITCH are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL16218/D
© Motorola, Inc. 1997
MJL16218
POWER TRANSISTOR
15 AMPERES
1500 VOLTS — VCES
170 WATTS
*Motorola Preferred Device
*
CASE 340G–02, STYLE 2
TO–3PBL


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